Abrosimova (Inst Of Microelectronics Tech & High Purity Materials, Russia) Vera
Meer over de auteurs
Abrosimova (Inst Of Microelectronics Tech & High Purity Materials, Russia) Vera,
Vitali V (St Petersburg State Tech Univ, Russia) Kozlovski
World Scientific Publishing Co Pte Ltd
e druk, 2005
9789812565211
Radiation Defect Engineering
Specificaties
Gebonden, 264 blz.
|
EN
World Scientific Publishing Co Pte Ltd |
e druk, 2005
ISBN13: 9789812565211
Rubricering
Onderdeel van serie
Selected Topics in Electronics and Systems
Levertijd ongeveer 15 werkdagen
Samenvatting
Explores radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. This book considers the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results.
Specificaties
ISBN13:9789812565211
Taal:EN
Bindwijze:Gebonden
Aantal pagina's:264
Uitgever:World Scientific Publishing Co Pte Ltd