Supriya Karmakar
Springer India
2014e druk, 2013
9788132216346
Novel Three-state Quantum Dot Gate Field Effect Transistor
Fabrication, Modeling and Applications
Specificaties
Gebonden, 134 blz.
|
Engels
Springer India |
2014e druk, 2013
ISBN13: 9788132216346
Rubricering
Levertijd ongeveer 8 werkdagen
Samenvatting
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.
Specificaties
ISBN13:9788132216346
Taal:Engels
Bindwijze:gebonden
Aantal pagina's:134
Uitgever:Springer India
Druk:2014
Inhoudsopgave
<p>Introduction: Multi State Devices and Logic.- Quantum Dot Gate Field Effect Transistor Device Structures.- Quantum Dot Gate Field Effect Transistors Fabrication and Characterization.- Quantum DOT Gate Field Effect Transistors Theory and Device Modeling.- Quantum Dot Gate NMOS Inverter.- Quantum Dot Gate Field Effect Transistor (QDGFET): Circuit Model and Ternary Logic Inverter.- Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) Using Quantum DOT Gate Field Effect Transistor (QDGFET).- Performance in SUB-25nm Range.- Conclusions.</p>