Cheol Seong Hwang
Springer US
2014e druk, 2013
9781461480532
Atomic Layer Deposition for Semiconductors
Specificaties
Gebonden, 263 blz.
|
Engels
Springer US |
2014e druk, 2013
ISBN13: 9781461480532
Rubricering
Levertijd ongeveer 8 werkdagen
Samenvatting
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Specificaties
ISBN13:9781461480532
Taal:Engels
Bindwijze:gebonden
Aantal pagina's:263
Uitgever:Springer US
Druk:2014
Inhoudsopgave
I.Introduction
Chapter 1. Introduction; Cheol Seong Hwang and Cha Young Yoo (Seoul National University and Samsung)
II.Fundamentals
Chapter 2 . ALD Precursors and Reaction mechanism ; Roy Gordon (Harvard)
Chapter 3 . ALD simulations; Simon Elliott (Tyndall)
III.ALD for memory devices
Chapter 4 . ALD for mass-production memories (DRAM and Flash); Cheol Seong Hwang,
Seong Keun Kim, and Sang Woon Lee (SNU)
III-2. ALD for emerging memories
Chapter 5 . PcRAM; Mikko Ritala and Simone Raoux (Helsinki and T. J. Watson IBM)
Chapter 6 .FeRAM; Susanne Hoffmann and Takayuki Watanabe (Juelich and Canon)
IV.ALD for logic devices
Chapter 7.Front end of the line process; Jeong Hwan Han, Moonju Cho, Annelies Delabie, Tae Joo Park, and Cheol Seong Hwang
Chapter 8. Back end of the line; Hyung Joon Kim, Han-Bo-Ram Lee, and Soohyun Kim (Yonsei and
Youngnam University)
V.ALD machines
Chapter 9. Equipment for Atomic Layer Deposition for Semiconductor Manufacturing; Schubert Chu
Chapter 1. Introduction; Cheol Seong Hwang and Cha Young Yoo (Seoul National University and Samsung)
II.Fundamentals
Chapter 2 . ALD Precursors and Reaction mechanism ; Roy Gordon (Harvard)
Chapter 3 . ALD simulations; Simon Elliott (Tyndall)
III.ALD for memory devices
Chapter 4 . ALD for mass-production memories (DRAM and Flash); Cheol Seong Hwang,
Seong Keun Kim, and Sang Woon Lee (SNU)
III-2. ALD for emerging memories
Chapter 5 . PcRAM; Mikko Ritala and Simone Raoux (Helsinki and T. J. Watson IBM)
Chapter 6 .FeRAM; Susanne Hoffmann and Takayuki Watanabe (Juelich and Canon)
IV.ALD for logic devices
Chapter 7.Front end of the line process; Jeong Hwan Han, Moonju Cho, Annelies Delabie, Tae Joo Park, and Cheol Seong Hwang
Chapter 8. Back end of the line; Hyung Joon Kim, Han-Bo-Ram Lee, and Soohyun Kim (Yonsei and
Youngnam University)
V.ALD machines
Chapter 9. Equipment for Atomic Layer Deposition for Semiconductor Manufacturing; Schubert Chu