Preface. Photograph of Participants. Introduction. Part I: Light emitting diodes. High efficiency silicon light emitting diodes; M.A. Green, et al. Dislocation-based silicon light emitting devices; M.A. Lourenço, et al. Efficient electroluminescence in alloyed silicon diodes; O.B. Gusev, et al. Light emitting devices based on silicon nanocrystals; A. Irrera, et al. Optical and electrical characteristics of LEDs fabricated from Si-nanocrystals embedded in SiO2; B. Garrido, et al. Electroluminescence in Si/SiO2 Layers; L. Heikkilö, et al. Reverse biased porous silicon light emitting diodes; S. Lazarouk. Strong blue light emission from ion implanted Si/SiO2 structures; W. Skorupa, et al. Si/Ge nanostructures for LED; G.E. Cirlin, et al. Part II: Silicon nanocrystals. Optical spectroscopy of single silicon quantum dots; J. Valenta, et al. Luminescence from Si/SiO2 nanostructures; Y. Kanemitsu. Electronic and dielectric properties of porous silicon; D. Kovalev, J. Diener. Silicon technology used for size-controlled silicon nanocrystals; M. Zacharias, et al. Structural and optical properties of silicon nanocrystals embedded in Silicon Oxide films; M. Miu, et al. Part III: Optical gain in silicon nanocrystals. Stimulated emission in silicon nanocrystals; L. Dal Negro, et al. Lasing effects in ultrasmall silicon nanoparticles; M.H. Nayfeh. On fast optical gain in silicon nanostructures; L. Khriachtchev, M. Räsänen. Experimental observation of optical amplification in silicon nanocrystals; M. Ivanda, et al. Optical amplification in nanocrystalline silicon superlattices; P.M. Fauchet, Jinhao Ruan.Optical gain from silicon nanocrystals: a critical perspective; A. Polman, R.G. Elliman. Optical gain measurements with variable stripe length technique; J. Valenta, et al. Part IV: Theory of silicon nanocrystals. Theory of silicon nanocrystals; C. Delerue, et al. Gain theory and models in silicon nanostructures; S. Ossicini, et al. Part V: Silicon/Germanium quantum dots and quantum cascade structures. Si-Ge quantum dot laser: What can we learn from III-V experience? N.N. Ledentsov. Promising SiGe superlattice and quantum well laser candidates; G. Sun, et al. Optical properties of arrays of Ge/Si quantum dots in electric field; A.V. Dvurechenskii, A.I. Yakimov. MBE of Si-Ge heterostructures with Ge nanocrystals; P.P. Pchelyakov, et al. Strain compensated Si/SiGe quantum cascade emitters grown on SiGe pseudosubstrates; L. Diehl, et al. Part VI: Terahertz silicon laser. Terahertz silicon laser: Intracenter optical pumping; S.G. Pavlov, et al. Silicon lasers based on shallow donor centers: Theoretical background and experimental results; V.N. Shastin, et al. Resonant states in modulation doped SiGe Heterostructures as a source of THz lasing; A.A. Prokofiev, et al. THz lasing of strained p-Ge and Si/Ge structures; M.S. Kagan. Terahertz emission from Silicon-Germanium quantum cascade; R.W Kelsall, et al. Part VII: Optical gain in Er doped Si nanocrystals. Towards an Er-doped Si nanocrystal sensitized waveguide laser: The thin line between gain and loss; P.G. Kik, A. Polman. Optical gain using nanocrystal sensitized Erbium; Jung H. Shin, et al. Excitation mechanism of Er photoluminescence in bulk Si and SiO2 with nanocryst
