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Semiconductor Lasers

Fundamentals and Applications

Specificaties
Gebonden, blz. | Engels
Elsevier Science | e druk, 2013
ISBN13: 9780857091215
Rubricering
Elsevier Science e druk, 2013 9780857091215
€ 289,00
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Samenvatting

Semiconductor lasers have important applications in numerous fields, including engineering, biology, chemistry and medicine. They form the backbone of the optical telecommunications infrastructure supporting the internet, and are used in information storage devices, bar-code scanners, laser printers and many other everyday products. Semiconductor lasers: Fundamentals and applications is a comprehensive review of this vital technology.Part one introduces the fundamentals of semiconductor lasers, beginning with key principles before going on to discuss photonic crystal lasers, high power semiconductor lasers and laser beams, and the use of semiconductor lasers in ultrafast pulse generation. Part two then reviews applications of visible and near-infrared emitting lasers. Nonpolar and semipolar GaN-based lasers, advanced self-assembled InAs quantum dot lasers and vertical cavity surface emitting lasers are all considered, in addition to semiconductor disk and hybrid silicon lasers. Finally, applications of mid- and far-infrared emitting lasers are the focus of part three. Topics covered include GaSb-based type I quantum well diode lasers, interband cascade and terahertz quantum cascade lasers, whispering gallery mode lasers and tunable mid-infrared laser absorption spectroscopy.With its distinguished editors and international team of expert contributors, Semiconductor lasers is a valuable guide for all those involved in the design, operation and application of these important lasers, including laser and telecommunications engineers, scientists working in biology and chemistry, medical practitioners, and academics working in this field.

Specificaties

ISBN13:9780857091215
Taal:Engels
Bindwijze:Gebonden

Inhoudsopgave

<p>Contributor contact details</p> <p>Woodhead Publishing Series in Electronic and Optical Materials</p> <p>Preface</p> <p>Part I: Fundamentals of semiconductor lasers</p> <p>Chapter 1: Principles of semiconductor lasers</p> <p>Abstract:</p> <p>1.1 Introduction</p> <p>1.2 The basic laser diode</p> <p>1.3 Key physical concepts</p> <p>1.4 Absorption and gain in low dimensional semiconductor structures</p> <p>1.5 Recombination processes</p> <p>1.6 Gain–current relations</p> <p>1.7 Temperature dependence of threshold current</p> <p>1.8 Rate equations</p> <p>1.9 Future trends</p> <p>1.10 Acknowledgements</p> <p>Chapter 2: Photonic crystal lasers</p> <p>Abstract:</p> <p>2.1 Introduction</p> <p>2.2 Lasing threshold of photonic crystal lasers (PhCLs)</p> <p>2.3 Photonic crystal nanobeam lasers</p> <p>2.4 Photonic crystal disk lasers</p> <p>2.5 Conclusion and future trends</p> <p>2.6 Acknowledgements</p> <p>Chapter 3: High-power semiconductor lasers</p> <p>Abstract:</p> <p>3.1 Introduction: theory and design concept</p> <p>3.2 Single emitters</p> <p>3.3 Array concept for power scaling</p> <p>3.4 Conclusion and future trends</p> <p>Chapter 4: Semiconductor laser beam combining</p> <p>Abstract:</p> <p>4.1 Introduction to laser beam combining</p> <p>4.2 Experiments on external cavity broad-area laser diode arrays</p> <p>4.3 Modeling the dynamics of a single-mode semiconductor laser array in an external cavity</p> <p>4.4 Conclusion</p> <p>4.5 Acknowledgments</p> <p>Chapter 5: Ultrafast pulse generation by semiconductor lasers</p> <p>Abstract:</p> <p>5.1 Introduction</p> <p>5.2 Gain-switching</p> <p>5.3 Important developments in gain-switched semiconductor lasers (SLs)</p> <p>5.4 Q-switching</p> <p>5.5 Mode-locking (ML) in semiconductor lasers: an overview</p> <p>5.6 The main predictions of mode-locked laser theory</p> <p>5.7 Important tendencies in optimising the ML laser performance</p> <p>5.8 Novel mode-locking principles</p> <p>5.9 Overview of applications of mode-locked diode lasers</p> <p>5.10 Conclusion</p> <p>5.11 Acknowledgements</p> <p>Part II: Visible and near-infrared lasers and their applications</p> <p>Chapter 6: Nonpolar and semipolar group III-nitride lasers</p> <p>Abstract:</p> <p>6.1 Introduction</p> <p>6.2 Applications of group III-nitride lasers</p> <p>6.3 Introduction to properties of III-nitrides</p> <p>6.4 Optical properties of nonpolar and semipolar III-nitrides</p> <p>6.5 Substrates, crystal growth and materials issues</p> <p>6.6 Optical waveguides and loss</p> <p>6.7 Fabrication techniques</p> <p>6.8 Nonpolar and semipolar laser history and performance</p> <p>6.9 Future trends</p> <p>6.10 Sources of further information and advice</p> <p>Chapter 7: Advanced self-assembled indium arsenide (InAs) quantum-dot lasers</p> <p>Abstract:</p> <p>7.1 Introduction</p> <p>7.2 High-density and highly uniform InAs quantum dots</p> <p>7.3 Quantum-dot Fabry–Pérot (FP) and distributed-feedback (DFB) lasers for optical communication</p> <p>7.4 Quantum-dot FP and DFB lasers for high-temperature application</p> <p>7.5 QD Laser, Inc</p> <p>7.6 Silicon hybrid quantum-dot lasers</p> <p>7.7 Conclusion</p> <p>7.8 Acknowledgements</p> <p>Chapter 8: Vertical cavity surface emitting lasers (VCSELs)</p> <p>Abstract:</p> <p>8.1 Introduction</p> <p>8.2 Device structure</p> <p>8.3 Vertical cavity surface emitting laser (VCSEL) optical performance</p> <p>8.4 Conclusion</p> <p>8.5 Acknowledgements</p> <p>Chapter 9: Semiconductor disk lasers (VECSELs)</p> <p>Abstract:</p> <p>9.1 Introduction</p> <p>9.2 Principles of operation</p> <p>9.3 Intracavity frequency control</p> <p>9.4 Pulsed operation</p> <p>9.5 Future trends and applications</p> <p>9.6 Sources of further information and advice</p> <p>Chapter 10: Hybrid silicon lasers</p> <p>Abstract:</p> <p>10.1 Introduction</p> <p>10.2 Fundamentals of Si lasers</p> <p>10.3 Hybrid Si laser-based photonic integrated circuits</p> <p>10.4 Conclusion</p> <p>Part III: Mid- and far-infrared lasers and their applications</p> <p>Chapter 11: Gallium antimonide (GaSb)-based type-I quantum well diode lasers: recent development and prospects</p> <p>Abstract:</p> <p>11.1 Introduction</p> <p>11.2 Diode lasers operating below 2.5 μm</p> <p>11.3 Diode lasers for spectral range above 3 μm</p> <p>11.4 Metamorphic GaSb-based diode lasers</p> <p>11.5 Acknowledgements</p> <p>Chapter 12: Interband cascade (IC) lasers</p> <p>Abstract:</p> <p>12.1 Introduction</p> <p>12.2 Operating principle of interband cascade (IC) lasers</p> <p>12.3 Early development and challenges</p> <p>12.4 Recent progress and new developments</p> <p>12.5 Future trends and conclusion</p> <p>12.6 Acknowledgments</p> <p>Chapter 13: Terahertz (THz) quantum cascade lasers</p> <p>Abstract:</p> <p>13.1 Terahertz quantum cascade laser technology</p> <p>13.2 Waveguides and photonic structures</p> <p>13.3 Stabilisation, microwave modulation and active mode-locking of terahertz quantum cascade lasers</p> <p>Chapter 14: Whispering gallery mode lasers</p> <p>Abstract:</p> <p>14.1 Introduction to whispering gallery modes (WGM)</p> <p>14.2 WGM in electrodynamics</p> <p>14.3 Semiconductor WGM lasers</p> <p>14.4 Light extraction from a WGM resonator</p> <p>14.5 Conclusion</p> <p>14.6 Acknowledgements</p> <p>Chapter 15: Tunable mid-infrared laser absorption spectroscopy</p> <p>Abstract:</p> <p>15.1 Introduction</p> <p>15.2 Laser absorption spectroscopic techniques</p> <p>15.3 Quantum-cascade lasers (QCLs) for trace gas detection</p> <p>15.4 Specific examples of QCL-based sensor systems</p> <p>15.5 Conclusions and future trends</p> <p>Index</p>
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