Jean-N. Chazalviel
Birkhäuser Boston
1999e druk, 1999
9780817639501
Coulomb Screening by Mobile Charges
Applications to Materials Science, Chemistry, and Biology
Specificaties
Gebonden, 355 blz.
|
Engels
Birkhäuser Boston |
1999e druk, 1999
ISBN13: 9780817639501
Rubricering
Levertijd ongeveer 8 werkdagen
Samenvatting
The idea of writing this book orIgmates from a suggestion of Bernard Sapoval: "Why don't you write it?" he asked. "Coulomb screening is a problem that everybody encounters in many different contexts, and there is no textbook that gathers the various aspects ofthe subject. " The content ofthe book, in a shorter form, was first taught for four years as a course in Dipl6me d'Etudes Approfondies Sciences des Materiaux, headed by Prof. J. -F. Petroff, at Paris VI University. The present extended version was written after discussions with Alia Margolina-Litvin. An essential feature of screening is its role in many different scientific areas. For that reason, the book is intended for use by a multidisciplinary readership. Reading it requires only a basic knowledge ofelectromagnetism, elementary quantum mechanics, and thermal physics. The spirit of the pre sentation is "simplicity first": new concepts (e. g. , dielectric function) are first introduced in their most elementary form and are progressively extended to more generality. The book stays at a basic level, and additional abstract developments that might have been included have been either omitted, rele gated to an appendix, or summarized in a qualitative manner. Apart from these restrictions, care has been taken to keep the presentation as rigorous as possible: the topics addressed are dealt with quantitatively, the results are given in mathematical form, and the interested reader should be able to fol low the algebra all the way through.
Specificaties
ISBN13:9780817639501
Taal:Engels
Bindwijze:gebonden
Aantal pagina's:355
Uitgever:Birkhäuser Boston
Druk:1999
Inhoudsopgave
I-1 What Is Screening?.- I-2 The Fundamental Problem of Screening: Small Fixed Point Charges in a Boltzmann Gas of Free Charged Particles.- I-3 References.- I: Distributions of Charges at Equilibrium or Near Equilibrium.- I: Screening of a Weak Static Charge Distribution.- I-A Gases of Classical Charged Particles (Maxwell—Boltzmann Statistics).- I-A-1 The Basic Tools: The Poisson Equation and Boltzmann Statistics.- I-A-2 The Dielectric Function % MathType!MTEF!2!1!+-
% feaagCart1ev2aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn
% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr
% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9
% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x
% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaaeaaaaaaaaa8
% qacqaH1oqzdaqadaWdaeaapeGabmyCayaalaaacaGLOaGaayzkaaaa
% aa!3A6B!$$\varepsilon \left( {\vec{q}} \right)$$.- I-A-3 Screening of a Distribution of External Charges % MathType!MTEF!2!1!+-
% feaagCart1ev2aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn
% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr
% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9
% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x
% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaaeaaaaaaaaa8
% qacqaHbpGCpaWaaSbaaSqaa8qacaWGLbaapaqabaGcpeWaaeWaa8aa
% baWdbiqadkhagaWcaaGaayjkaiaawMcaaaaa!3BE3!$${{\rho }_{e}}\left( {\vec{r}} \right)$$.- I-A-4 Thermodynamics of Point-Charge Screening: Ion Activity in an Electrolyte.- I-B Anisotropic Medium or Reduced Dimensionality.- I-B-1 Anisotropic Medium.- I-B-2 2-D Systems.- I-B-3 1-D Systems.- I-C Fermion Gas (Electrons in a Metal).- I-C-1 Fermi—Dirac Statistics.- I-C-2 Screening in the Thomas—Fermi Approximation.- I-C-3 Quantum Treatment of Screening for a Degenerate Free-Electron Gas.- I-C-4 A Remarkable Feature of % MathType!MTEF!2!1!+-
% feaagCart1ev2aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn
% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr
% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9
% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x
% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaaeaaaaaaaaa8
% qacqaH1oqzdaqadaWdaeaapeGabmyCayaalaaacaGLOaGaayzkaaaa
% aa!3A6B!$$\varepsilon \left( {\vec{q}} \right)$$:
The Singularity at 2kF.- I-C-5 Screening of a Point Charge: Friedel Oscillations.- Problems.- References.- II: Screening of a Static Charge Distribution Beyond the Linear Regime.- II-A General Formalism with Local Constitutive Equation.- II-B Semiconductor Surfaces and Interfaces.- II-B-1 Semiconductor Statistics.- II-B-2 Surface of a Doped Semiconductor: The Space-Charge Layer.- II-B-3 The Free Semiconductor Surface.- II-B-4 MOS Structures.- II-B-5 Schottky Junctions.- II-B-6 A Correction to Poisson—Boltzmann Approximation: The Image Potential.- II-C Electrochemical Interfaces: The Double Layer.- II-C-1 Diffuse and Compact Layer: Interface Capacitance.- II-C-2 Interfaces of Arbitrary Geometrical Shape.- II-D Biophysical Systems.- II-D-1 Screening in Polyelectrolytes.- II-D-2 The B-Z Transition of DNA.- II-E Fermion Systems.- II-E-1 Thomas—Fermi Approximation.- II-E-2 A Simple View of the Atom: Drawbacks of the Thomas—Fermi Approximation.- II-E-3 About Rigorous Treatments of Multielectron Systems.- II-E-4 An Improved Version of Screening Methods: Density-Functional Theory.- Problems.- References.- III: Time-Dependent Charge Distributions: The Generalized Dielectric Function % MathType!MTEF!2!1!+-
% feaagCart1ev2aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn
% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr
% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9
% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x
% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaaeaaaaaaaaa8
% qacqaH1oqzdaqadaWdaeaapeGabmyCayaalaGaaiilaiabeM8a3bGa
% ayjkaiaawMcaaaaa!3CE8!$$\varepsilon \left( {\vec{q},\omega } \right)$$.- III-A Spatially Uniform Time-Dependent Perturbation: ?(?).- III-A-1 A.C. Electrical Conductivity.- III-A-2 General Properties of ?(?) and ?(?): Causality Principle.- III-A-3 Good Conductors Versus Poor Conductors.- III-A-4 Optical Properties of Metals: Plasma Frequency.- III-B Spatially Variable Time-Dependent Perturbation: % MathType!MTEF!2!1!+-
% feaagCart1ev2aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn
% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr
% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9
% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x
% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaaeaaaaaaaaa8
% qacqaH1oqzdaqadaWdaeaapeGabmyCayaalaGaaiilaiabeM8a3bGa
% ayjkaiaawMcaaaaa!3CE8!$$\varepsilon \left( {\vec{q},\omega } \right)$$.- III-B-1 Good Conductors: Plasmons.- III-B-2 Poor Conductors.- III-B-3 General Case: The Transport-Equation Approach.- III-B-4 Effect of Dimensionality.- III-C Appendix: A More Elaborate Version of Linear-Response Theory.- III-C-1 Kubo Formalism.- III-C-2 Fluctuation-Dissipation Theorem.- Problems.- References.- IV: Applications of % MathType!MTEF!2!1!+-
% feaagCart1ev2aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn
% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr
% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9
% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x
% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaaeaaaaaaaaa8
% qacqaH1oqzdaqadaWdaeaapeGabmyCayaalaGaaiilaiabeM8a3bGa
% ayjkaiaawMcaaaaa!3CE8!$$\varepsilon \left( {\vec{q},\omega } \right)$$
to Practical Problems.- IV-A Motion of an External Charge through the System.- IV-A-1 General Formalism: Force Experienced by the External Charge.- IV-A-2 Fast Particle through a Solid: Electronic Stopping Power.- IV-A-3 Inelastic Electron Scattering.- IV-A-4 Inelastic Light Scattering (Electronic Raman Effect).- IV-A-5 Ion in an Electrolyte: Mobility.- IV-A-6 An Example of Breakdown of the Linear Approach: Core-Level Photoemission in Metals.- IV-B Plasmons in the Solid State.- IV-B-1 Two-Component Plasmas: Phonons in Metals.- IV-B-2 Crystal-Related Effects: Local Field and Interband Transitions.- IV-B-3 Surface Plasmons; Plasmons in 2-D and 1-D Systems.- IV-B-4 Physics of a Metal in a Magnetic Field: New Resonances and Quasi-Particle Excitations.- IV-B-5 Concluding Remarks on Systems of Charges near Equilibrium.- Problems.- References.- II: Distributions of Charges Far from Equilibrium.- V: Screening Survival: The Quasi-Neutrality Approximation.- V-A General Formalism.- V-A-1 Setting up the Problem.- V-A-2 Three Cases for Getting a Feeling.- V-A-3 Quasi-Neutrality Approximation.- V-B Quasi-Neutrality Approximation in Semiconductor Physics.- V-B-1 Dember Effect.- V-B-2 Doped Semiconductor in the Presence of Excess Minority Carriers.- V-B-3 The p-n Junction Diode.- V-C Quasi-Neutrality Approximation in Electrochemistry and Biology.- V-C-1 Mass Transport near an Electrode: Effect of a Supporting Electrolyte.- V-C-2 Junction Potentials and Ion Transport through Membranes.- V-C-3 Nerve-Impulse Propagation.- Problems.- References.- VI: Screening Breakdown: Space-Charge-Limited Currents.- VI-A Electrons in Vacuum: Child’s Law.- VI-B Transport of a Single Type of Charge in a Solid.- VI-B-1 Ideal Insulator: Child’s Law for Solids.- VI-B-2 Weakly Doped n-Type Semiconductor.- VI-B-3 Problem of the Boundary Conditions.- VI-B-4 Injection into a Semiconductor in the Presence of Traps.- VI-B-5 Systems with Peculiar Transport Properties.- VI-B-6 Transient Regime.- VI-C Injection of Two Types of Charges.- VI-C-1 Injected Plasma.- VI-C-2 A.C. Transport in a p-i-n Diode.- VI-D Importance of the Boundary Conditions: Mixed Conductors and Binary Electrolytes.- VI-D-1 Introduction to Mixed Conductors.- VI-D-2 Measuring the Electronic Conductivity of a Mixed Conductor.- VI-D-3 Binary Electrolytes Under Extreme Conditions: Growth of Ramified Metallic Electrodeposits.- Problems.- References.- Conclusion.- Answers and Solutions to Selected Problems.- Index of Symbols.
% feaagCart1ev2aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn
% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr
% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9
% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x
% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaaeaaaaaaaaa8
% qacqaH1oqzdaqadaWdaeaapeGabmyCayaalaaacaGLOaGaayzkaaaa
% aa!3A6B!$$\varepsilon \left( {\vec{q}} \right)$$.- I-A-3 Screening of a Distribution of External Charges % MathType!MTEF!2!1!+-
% feaagCart1ev2aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn
% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr
% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9
% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x
% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaaeaaaaaaaaa8
% qacqaHbpGCpaWaaSbaaSqaa8qacaWGLbaapaqabaGcpeWaaeWaa8aa
% baWdbiqadkhagaWcaaGaayjkaiaawMcaaaaa!3BE3!$${{\rho }_{e}}\left( {\vec{r}} \right)$$.- I-A-4 Thermodynamics of Point-Charge Screening: Ion Activity in an Electrolyte.- I-B Anisotropic Medium or Reduced Dimensionality.- I-B-1 Anisotropic Medium.- I-B-2 2-D Systems.- I-B-3 1-D Systems.- I-C Fermion Gas (Electrons in a Metal).- I-C-1 Fermi—Dirac Statistics.- I-C-2 Screening in the Thomas—Fermi Approximation.- I-C-3 Quantum Treatment of Screening for a Degenerate Free-Electron Gas.- I-C-4 A Remarkable Feature of % MathType!MTEF!2!1!+-
% feaagCart1ev2aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn
% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr
% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9
% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x
% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaaeaaaaaaaaa8
% qacqaH1oqzdaqadaWdaeaapeGabmyCayaalaaacaGLOaGaayzkaaaa
% aa!3A6B!$$\varepsilon \left( {\vec{q}} \right)$$:
The Singularity at 2kF.- I-C-5 Screening of a Point Charge: Friedel Oscillations.- Problems.- References.- II: Screening of a Static Charge Distribution Beyond the Linear Regime.- II-A General Formalism with Local Constitutive Equation.- II-B Semiconductor Surfaces and Interfaces.- II-B-1 Semiconductor Statistics.- II-B-2 Surface of a Doped Semiconductor: The Space-Charge Layer.- II-B-3 The Free Semiconductor Surface.- II-B-4 MOS Structures.- II-B-5 Schottky Junctions.- II-B-6 A Correction to Poisson—Boltzmann Approximation: The Image Potential.- II-C Electrochemical Interfaces: The Double Layer.- II-C-1 Diffuse and Compact Layer: Interface Capacitance.- II-C-2 Interfaces of Arbitrary Geometrical Shape.- II-D Biophysical Systems.- II-D-1 Screening in Polyelectrolytes.- II-D-2 The B-Z Transition of DNA.- II-E Fermion Systems.- II-E-1 Thomas—Fermi Approximation.- II-E-2 A Simple View of the Atom: Drawbacks of the Thomas—Fermi Approximation.- II-E-3 About Rigorous Treatments of Multielectron Systems.- II-E-4 An Improved Version of Screening Methods: Density-Functional Theory.- Problems.- References.- III: Time-Dependent Charge Distributions: The Generalized Dielectric Function % MathType!MTEF!2!1!+-
% feaagCart1ev2aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn
% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr
% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9
% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x
% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaaeaaaaaaaaa8
% qacqaH1oqzdaqadaWdaeaapeGabmyCayaalaGaaiilaiabeM8a3bGa
% ayjkaiaawMcaaaaa!3CE8!$$\varepsilon \left( {\vec{q},\omega } \right)$$.- III-A Spatially Uniform Time-Dependent Perturbation: ?(?).- III-A-1 A.C. Electrical Conductivity.- III-A-2 General Properties of ?(?) and ?(?): Causality Principle.- III-A-3 Good Conductors Versus Poor Conductors.- III-A-4 Optical Properties of Metals: Plasma Frequency.- III-B Spatially Variable Time-Dependent Perturbation: % MathType!MTEF!2!1!+-
% feaagCart1ev2aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn
% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr
% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9
% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x
% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaaeaaaaaaaaa8
% qacqaH1oqzdaqadaWdaeaapeGabmyCayaalaGaaiilaiabeM8a3bGa
% ayjkaiaawMcaaaaa!3CE8!$$\varepsilon \left( {\vec{q},\omega } \right)$$.- III-B-1 Good Conductors: Plasmons.- III-B-2 Poor Conductors.- III-B-3 General Case: The Transport-Equation Approach.- III-B-4 Effect of Dimensionality.- III-C Appendix: A More Elaborate Version of Linear-Response Theory.- III-C-1 Kubo Formalism.- III-C-2 Fluctuation-Dissipation Theorem.- Problems.- References.- IV: Applications of % MathType!MTEF!2!1!+-
% feaagCart1ev2aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn
% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr
% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9
% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x
% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaaeaaaaaaaaa8
% qacqaH1oqzdaqadaWdaeaapeGabmyCayaalaGaaiilaiabeM8a3bGa
% ayjkaiaawMcaaaaa!3CE8!$$\varepsilon \left( {\vec{q},\omega } \right)$$
to Practical Problems.- IV-A Motion of an External Charge through the System.- IV-A-1 General Formalism: Force Experienced by the External Charge.- IV-A-2 Fast Particle through a Solid: Electronic Stopping Power.- IV-A-3 Inelastic Electron Scattering.- IV-A-4 Inelastic Light Scattering (Electronic Raman Effect).- IV-A-5 Ion in an Electrolyte: Mobility.- IV-A-6 An Example of Breakdown of the Linear Approach: Core-Level Photoemission in Metals.- IV-B Plasmons in the Solid State.- IV-B-1 Two-Component Plasmas: Phonons in Metals.- IV-B-2 Crystal-Related Effects: Local Field and Interband Transitions.- IV-B-3 Surface Plasmons; Plasmons in 2-D and 1-D Systems.- IV-B-4 Physics of a Metal in a Magnetic Field: New Resonances and Quasi-Particle Excitations.- IV-B-5 Concluding Remarks on Systems of Charges near Equilibrium.- Problems.- References.- II: Distributions of Charges Far from Equilibrium.- V: Screening Survival: The Quasi-Neutrality Approximation.- V-A General Formalism.- V-A-1 Setting up the Problem.- V-A-2 Three Cases for Getting a Feeling.- V-A-3 Quasi-Neutrality Approximation.- V-B Quasi-Neutrality Approximation in Semiconductor Physics.- V-B-1 Dember Effect.- V-B-2 Doped Semiconductor in the Presence of Excess Minority Carriers.- V-B-3 The p-n Junction Diode.- V-C Quasi-Neutrality Approximation in Electrochemistry and Biology.- V-C-1 Mass Transport near an Electrode: Effect of a Supporting Electrolyte.- V-C-2 Junction Potentials and Ion Transport through Membranes.- V-C-3 Nerve-Impulse Propagation.- Problems.- References.- VI: Screening Breakdown: Space-Charge-Limited Currents.- VI-A Electrons in Vacuum: Child’s Law.- VI-B Transport of a Single Type of Charge in a Solid.- VI-B-1 Ideal Insulator: Child’s Law for Solids.- VI-B-2 Weakly Doped n-Type Semiconductor.- VI-B-3 Problem of the Boundary Conditions.- VI-B-4 Injection into a Semiconductor in the Presence of Traps.- VI-B-5 Systems with Peculiar Transport Properties.- VI-B-6 Transient Regime.- VI-C Injection of Two Types of Charges.- VI-C-1 Injected Plasma.- VI-C-2 A.C. Transport in a p-i-n Diode.- VI-D Importance of the Boundary Conditions: Mixed Conductors and Binary Electrolytes.- VI-D-1 Introduction to Mixed Conductors.- VI-D-2 Measuring the Electronic Conductivity of a Mixed Conductor.- VI-D-3 Binary Electrolytes Under Extreme Conditions: Growth of Ramified Metallic Electrodeposits.- Problems.- References.- Conclusion.- Answers and Solutions to Selected Problems.- Index of Symbols.