Tatsuya (Hiroshima Univ, Japan) Ezaki,
Hans Jurgen (Hiroshima Univ, Japan) Mattausch,
Mitiko (Hiroshima Univ, Japan) Miura-mattausch
World Scientific Publishing Co Pte Ltd
e druk, 2008
9789812568649
Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim
Specificaties
Gebonden, 380 blz.
|
EN
World Scientific Publishing Co Pte Ltd |
e druk, 2008
ISBN13: 9789812568649
Rubricering
Onderdeel van serie
International Series On Advances In Solid State Electronics And Technology
Verwachte levertijd ongeveer 16 werkdagen
Samenvatting
Provides a description of the compact MOS transistor models for circuit simulation. This book considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
Specificaties
ISBN13:9789812568649
Taal:EN
Bindwijze:Gebonden
Aantal pagina's:380
Uitgever:World Scientific Publishing Co Pte Ltd