Silicon-Based Millimeter-Wave Devices

1. Fundamentals.- 1.1 Silicon as the Base Material for MMICs.- 1.2 Linear Passive Planar Millimeter Wave Circuits on Silicon.- 1.3 Planar Millimeter-Wave Antennas on Silicon.- 1.4 Planar Millimeter-Wave Circuits Containing Active and Nonlinear Elements.- 1.5 Appendix: Closed-Form Expressions for Transmission-Line Characteristics.- References.- 2. Transit-Time Devices.- 2.1 Principles of Transit-Time-Induced Negative Resistance.- 2.2 Injection Mechanisms.- 2.3 Numerical Large-Signal Simulations.- 2.4 Skin Effect.- 2.5 Thermal Properties.- 2.6 Design Constraints.- 2.7 Technology.- 2.8 Performance.- 2.9 New Transit-Time Device Concepts.- References.- 3. Schottky Contacts on Silicon.- 3.1 Schottky-Barrier Models.- 3.2 Epitaxial Diodes on Si.- 3.3 Electrical Transport Properties.- 3.4 Schottky-Barrier Measurements.- 3.5 Conclusions.- References.- 4. SiGe Heterojunction Bipolar Transistors.- 4.1 Operation Principle of Homojunction and Heterojunction Bipolar Transistors.- 4.2 Design of SiGe HBT Layers.- 4.3 Fabrication Technologies and Device Performance.- 4.4 Applications of SiGe HBTs.- 4.5 Conclusion.- References.- 5. Silicon Millimeter-Wave Integrated Circuits.- 5.1 Silicon as the Substrate Material.- 5.2 Millimeter-Wave Sources for SIMMWICs.- 5.3 SIMMWIC Transmitter.- 5.4 SIMMWIC Receiver.- 5.5 SIMMWIC Switch.- References.- 6. Self-Mixing Oscillators.- 6.1 Principle of Operation.- 6.2 Linear Disturbance Theory.- 6.3 Matrix Formulation of Conversion Gain.- 6.4 Noise in Self-Mixing Oscillators.- 6.5 Numerical Simulations.- 6.6 Measuring Techniques and Experimental Results.- References.- 7. Silicon Millimeter-Wave Integrated Circuit Technology.- 7.1 Technological Requirements for a Millimeter-Wave Substrate.- 7.2 Basic Technologies.- 7.3 Fabrication Process and Monolithic Integration of Two-Terminal Devices.- 7.4 Fabrication Process of Three-Terminal Devices.- 7.5 Summary and Prospects.- References.- 8. Future Devices.- 8.1 Physics and Applications of Si/SiGe, Double-Barrier Structures.- 8.2 The Si/SiGe Quantum Barrier Varactor Diode.- 8.3 Field-Effect Devices: Si/SiGe MODFET and MOST, ?-Doped Si FET.- Appendix 8.A The Effective-Mass Approximation.- Appendix 8.B Maximum Oscillation Frequency and Power Generation.- References.- 9. Future Applications.- 9.1 Sensor Applications.- 9.2 Communication Applications.- 9.3 System Requirements.- References.