Zhe Chuan Feng
Springer Berlin Heidelberg
0e druk, 2010
9783642058455
SiC Power Materials
Devices and Applications
Specificaties
Paperback, 452 blz.
|
Engels
Springer Berlin Heidelberg |
0e druk, 2010
ISBN13: 9783642058455
Rubricering
Onderdeel van serie
Springer Series in Materials Science
Verwachte levertijd ongeveer 9 werkdagen
Samenvatting
This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century.
Specificaties
ISBN13:9783642058455
Taal:Engels
Bindwijze:paperback
Aantal pagina's:452
Uitgever:Springer Berlin Heidelberg
Druk:0
Inhoudsopgave
1 Materials Science and Engineering of Bulk Silicon Carbides.- 2 Fundamental Properties of SiC: Crystal Structure, Bonding Energy, Band Structure, and Lattice Vibrations.- 3 Sublimation Growth of SiC Single Crystals.- 4 Crystal Growth of Silicon Carbide: Evaluation and Modeling.- 5 Lattice Dynamics of Defects and Thermal Properties of 3C-SiC.- 6 Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition.- 7 Electron Paramagnetic Resonance Characterization of SiC.- 8 Material Selection and Interfacial Reaction in Ohmic-Contact Formation on SiC.- 9 Oxidation, MOS Capacitors, and MOSFETs.- 10 4H-SiC Power-Switching Devices for Extreme-Environment Applications.- 11 SiC Nuclear-Radiation Detectors.
