R. K. Sharma,
D.S. Rawal
Springer International Publishing
e druk, 2019
9783319976037
The Physics of Semiconductor Devices
Proceedings of IWPSD 2017
Specificaties
Gebonden, blz.
|
Engels
Springer International Publishing |
e druk, 2019
ISBN13: 9783319976037
Rubricering
Onderdeel van serie
Springer Proceedings in Physics
Levertijd ongeveer 8 werkdagen
Samenvatting
This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community.
The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
Specificaties
ISBN13:9783319976037
Taal:Engels
Bindwijze:gebonden
Uitgever:Springer International Publishing
Inhoudsopgave
Enhanced Photodetection in Visible Region in rGo/GaN Based Hybrid Photodetector.- ZigZag Phosphorene Nanoribbons Antidot – Electronic structure and Device Application.- Calculation of Quantum Capacitance and Sheet Carrier Density of Graphene FETs.- Effect of Back Gate Voltage on Double Gate Single Layer Graphene Field-Effect Transistor with Improved ION.- Effects of chemical functionalization on single-walled carbon nanotubes by mild hydrogen peroxide for PV applications.- Effect of tip induced strain on nanoscale electrical properties of MoS2-Graphene heterojunctions.- Optimization of the concentration of molybdenum disulfide (MoS2) for formation of atomically thin layers.- Fabrication of 2D NEMS on flexible substrates for strain engineering in sensing applications.- Transition metal doped ZnS monolayer: The first principles insights.- Tuning Resonant Wavelength of Silicon Micro-ring Resonator with Graphene.- Diameter Dependent Band Gap Properties of Different Structures of Single-walled Carbon.-Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors.