Preface <br>List of Symbols <br>List of Greek Symbols <br>List of Acronyms <p>1. Introduction </p> <p>References</p> 2. Basic Properties of Metals in Semiconductors (20 p) <p></p> <p>2.1 Diffusivity</p> <p>2.2 Solubility</p> <p>2.3 Segregation</p> <p>2.4 Precipitation and Gettering</p> 2.5 Electrical Properties<p></p> <p>2.5.1 Shockley Read Hall Model</p> <p>2.5.2 Activation Energy</p> <p>2.5.3 Lifetime and capture cross-section</p> 2.5.4 Leakage current<p></p> <p>References </p> 3. Sources of Metals in Si and Ge Processing (40 p) <p></p> <p>3.1 Crystal Growth</p> <p>3.1.1 Micro-electronics grade crystalline substrates</p> <p>3.1.2 Substrates for PV applications</p> <p>3.2 Wafer Handling</p> <p>3.3 Wafer Cleaning</p> <p>3.4 Lithography and Patterning</p> <p>3.4.1 Resist Processing and Stripping</p> <p>3.4.2 Wet Etching</p> <p>3.4.3 Dry Etching</p> <p>3.5 Ion Implantation</p> <p>3.6 Thermal Processing</p> 3.6.1 Diffusion processes<p></p> <p>3.6.2 Gate Dielectrics</p> <p>3.6.3 Deposition Techniques</p> <p>3.7 Silicidation and Metallization</p> 3.8 Chemical Mechanical Polishing<p></p> <p>3.9 Through Silicon Vias Processing</p> <p>References </p> <p>4. Characterization and Detection of Metals in Silicon and Germanium (30 p)</p> <p>4.1 Chemical Techniques </p><p>4.1.1. Electron Spin Resonanc< </p><p>4.1.2. SIMS and TOFSIMS</p> <p>4.1.3. X-ray analysis (TXRF/EDX)</p> <p>4.1.4. Neutron Activation Analysis</p> <p>4.1.5. Structural Charactization (precipitates):</p><p></p> <p>4.2.1 Scanning and transmission Electron Microscopy (SEM –TEM)</p> <p>4.2.2 Optical Spectroscopy (AFM) & Defect Etching (haze test)</p> <p>4.2.3 Scanning PL technique</p> 4.3 Electrical Characterization<p></p> <p>4.3.1 Hall Effect versus Temperature</p> <p>4.3.2 Deep-Level Transient Spectroscopy (DLTS); </p> <p>4.3.3 Lifetime Measurements</p> <p>4.3.3.1 MOS Zerbst Technique</p> 4.3.3.2 Surface Photo Voltage (SPV)<p></p> <p>4.3.3.3 Microwave Absorption Analysis (MWA)</p> <p>4.3.3.4 Electrolytic Methods (Elymat)</p> 4.3.3.5 Ion drift studies<p></p> <p>4.4 Metal Contamination analysis methodology</p> <p>References</p> <p>5. Electrical activity of Metals in Si and Ge (50 p) </p> <p>5.1 Properties of Fe (DLTS levels and lifetime) </p> <p>5.2 Properties of Cu </p> <p>5.3 Properties of Ni </p> 5.4 Properties of other TM (Ti, Co, Cr, Mn,..)<p></p> 5.5 Properties of Au, Pt and Ag <p></p> <p>5.6 Properties of Refractory Metals (Mo, W,…) </p> <p>5.7 Properties of Rare Earths </p> <p>References</p> <p>6. Impact of metals on silicon devices and circuits (30 p)</p> <p> </p> <p>6.1 P-n junction leakage and Lifetime Control </p> <p>6.2 MOS Interface States and Dielectric Breakdown </p> <p>6.3 Reliability Aspects </p> <p>6.4 Charge Coupled Devices (CCDs) and CMOS Imagers </p> <p>6.5 Solar Cell Efficiency </p> <p>6.6 Impact on Circuit Yield </p> <p>References</p> 7. Gettering and Passivation of Metals in Silicon and Germanium (30 p) <p></p> 7.1 Gettering Strategies <p></p> <p>7.4 Back Damage Gettering</p> <p> 7.4.1 Mechanical Stress (poly-Si, Si<sub>3</sub>N<sub>4</sub>, sandblasting, high doping layer)</p> 7.4.2 Ion Implantation<p></p> <p>7.5 Front Side Gettering</p> 7.5.1 Ion Implantation<p></p> <p> 7.5.2 Proximity Gettering</p> <p> 7.5.3 Nano Cavities</p> <p>7.6 Al Gettering</p> <p>7.7 Hydrogen Passivation of Metals</p> <p>References</p> <p>8. Modeling and Simulation of Metals in Silicon and Germanium (15 p) </p> <p>8.1 First Principles Analysis</p> <p>8.2. Density Functional Theory (DFT)</p> <p>8.3 Modeling/Simulation Metals</p> <p>8.4 Gettering Simulation</p> <p>References</p> <p>Conclusions</p>