Eric Garfunkel,
Evgeni Gusev,
Alexander Vul'
Springer Netherlands
1998e druk, 1998
9780792350071
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
Specificaties
Gebonden, 507 blz.
|
Engels
Springer Netherlands |
1998e druk, 1998
ISBN13: 9780792350071
Rubricering
Onderdeel van serie
NATO Science Partnership Subseries: 3
Levertijd ongeveer 8 werkdagen
Samenvatting
An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Specificaties
ISBN13:9780792350071
Taal:Engels
Bindwijze:gebonden
Aantal pagina's:507
Uitgever:Springer Netherlands
Druk:1998
Inhoudsopgave
Preface. Introduction. 1. Recent Advances in Experimental Studies of SiO2 Films on Si. 2. Theory of the SiO2/Si and SiOxNy/Si Systems. 3. Growth Mechanism, Processing, and Analysis of (Oxy)nitridation. 4. Initial Oxidation and Surface Science Issues. 5. Electrical Properties and Microscopic Models of Defects. 6. Hydrogen/Deuterium Issues. 7. New Substrates (SiC, SiGe) and SOI Technologies. Appendix. Authors Index. List of Workshop Participants.