H. Craig (Duke University) Casey,
HC Casey
John Wiley & Sons
e druk, 1998
9780471171348
Devices for Integrated Circuits – Silicon & III–V Compound Semiconductors
Silicon and III–V Compound Semiconductors
Specificaties
Gebonden, 544 blz.
|
Engels
John Wiley & Sons |
e druk, 1998
ISBN13: 9780471171348
Rubricering
Verwachte levertijd ongeveer 9 werkdagen
Samenvatting
A detailed, modern introduction to semiconductors made in silicon and III–V compounds. This book develops the device physics of pn junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field–effect transistors (MOSFETs). Basic concepts from quantum and statistical mechanics are used to describe electrons and holes in semiconductors. Figures and examples based on realistic device parameters are used to illustrate important concepts. The book uses spice tools to analyze complex devices. Design specifications are stressed in building or modeling complicated semiconductor devices.
Specificaties
Inhoudsopgave
<p>Integrated Circuit Family Tree</p>
<p>Electrons in Solids</p>
<p>Carrier Transport and Recombination</p>
<p>p–n Junctions: I–V Behavior</p>
<p>p–n Junctions: Reverse Breakdown and Junction Capacitance</p>
<p>Schottky–Barrier Devices</p>
<p>MOS Capacitors</p>
<p>MOS Field–Effect Transistors</p>
<p>Bipolar Transistors</p>
<p>Appendix I: Introduction to PSPICE</p>
<p>Electrons in Solids</p>
<p>Carrier Transport and Recombination</p>
<p>p–n Junctions: I–V Behavior</p>
<p>p–n Junctions: Reverse Breakdown and Junction Capacitance</p>
<p>Schottky–Barrier Devices</p>
<p>MOS Capacitors</p>
<p>MOS Field–Effect Transistors</p>
<p>Bipolar Transistors</p>
<p>Appendix I: Introduction to PSPICE</p>