Xu Ma,
X Ma,
Gonzalo R. Arce
John Wiley & Sons
e druk, 2010
9780470596975
Computational Lithography
Specificaties
Gebonden, 256 blz.
|
Engels
John Wiley & Sons |
e druk, 2010
ISBN13: 9780470596975
Rubricering
Onderdeel van serie
Wiley Series in Pure and Applied Optics
Verwachte levertijd ongeveer 9 werkdagen
Samenvatting
This is the first book to address the optimization of resolution enhancement techniques in optical lithography. It provides an in–depth discussion of RET tools that use model–based mathematical optimization approaches. The book starts with an introduction of optical lithography systems, electric magnetic field principles, and fundamentals of optimization; it goes on to describe algorithms for the development of optimal optical proximity correction, phaseshifting mask, offaxis illumination approaches, and their combinations. The accompanying mathematical derivations and MATLAB® software files make it easy for researchers, scientists, engineers, and graduate students and faculty to apply any of the optimization algorithms.
Specificaties
Inhoudsopgave
Preface.
<p>Acknowledgments.</p>
<p>Acronyms.</p>
<p>1 Introduction.</p>
<p>1.1 Optical Lithography.</p>
<p>1.2 Rayleigh s Resolution.</p>
<p>1.3 Resist Processes and Characteristics.</p>
<p>1.4 Techniques in Computational Lithography.</p>
<p>1.5 Outline.</p>
<p>2 Optical Lithography Systems.</p>
<p>2.1 Partially Coherent Imaging Systems.</p>
<p>2.2 Approximation Models.</p>
<p>2.3 Summary.</p>
<p>3 Rule–Based Resolution Enhancement Techniques.</p>
<p>3.1 RET Types.</p>
<p>3.2 Rule–Based OPC.</p>
<p>3.3 Rule–Based PSM.</p>
<p>3.4 Rule–Based OAI.</p>
<p>3.5 Summary.</p>
<p>4 Fundamentals of Optimization.</p>
<p>4.1 Definition and Classification.</p>
<p>4.2 Unconstrained Optimization.</p>
<p>4.3 Summary.</p>
<p>5 Computational Lithography with Coherent Illumination.</p>
<p>5.1 Problem Formulation.</p>
<p>5.2 OPC Optimization.</p>
<p>5.3 Two–Phase PSM Optimization.</p>
<p>5.4 Generalized PSM Optimization.</p>
<p>5.5 Resist Modeling Effects.</p>
<p>5.6 Summary.</p>
<p>6 Regularization Framework.</p>
<p>6.1 Discretization Penalty.</p>
<p>6.2 Complexity Penalty.</p>
<p>6.3 Summary.</p>
<p>7 Computational Lithography with Partially Coherent Illumination.</p>
<p>7.1 OPC Optimization.</p>
<p>7.2 PSM Optimization.</p>
<p>7.3 Summary.</p>
<p>8 Other RET Optimization Techniques.</p>
<p>8.1 Double–Patterning Method.</p>
<p>8.2 Post–Processing Based on 2D DCT.</p>
<p>8.3 Photoresist Tone Reversing Method.</p>
<p>8.4 Summary.</p>
<p>9 Source and Mask Optimization.</p>
<p>9.1 Lithography Preliminaries.</p>
<p>9.2 Topological Constraint.</p>
<p>9.3 Source Mask Optimization Algorithm.</p>
<p>9.4 Simulations.</p>
<p>9.5 Summary.</p>
<p>10 Coherent Thick–Mask Optimization.</p>
<p>10.1 Kirchhoff Boundary Conditions.</p>
<p>10.2 Boundary Layer Model.</p>
<p>10.3 Lithography Preliminaries.</p>
<p>10.4 OPC Optimization.</p>
<p>10.5 PSM Optimization.</p>
<p>10.6 Summary.</p>
<p>11 Conclusions and New Directions of Computational Lithography.</p>
<p>11.1 Conclusion.</p>
<p>11.2 New Directions of Computational Lithography.</p>
<p>Appendix A: Formula Derivation in Chapter 5.</p>
<p>Appendix B: Manhattan Geometry.</p>
<p>Appendix C: Formula Derivation in Chapter 6.</p>
<p>Appendix D: Formula Derivation in Chapter 7.</p>
<p>Appendix E: Formula Derivation in Chapter 8.</p>
<p>Appendix F: Formula Derivation in Chapter 9.</p>
<p>Appendix G: Formula Derivation in Chapter 10.</p>
<p>Appendix H: Software Guide.</p>
<p>References.</p>
<p>Index.</p>
<p>Acknowledgments.</p>
<p>Acronyms.</p>
<p>1 Introduction.</p>
<p>1.1 Optical Lithography.</p>
<p>1.2 Rayleigh s Resolution.</p>
<p>1.3 Resist Processes and Characteristics.</p>
<p>1.4 Techniques in Computational Lithography.</p>
<p>1.5 Outline.</p>
<p>2 Optical Lithography Systems.</p>
<p>2.1 Partially Coherent Imaging Systems.</p>
<p>2.2 Approximation Models.</p>
<p>2.3 Summary.</p>
<p>3 Rule–Based Resolution Enhancement Techniques.</p>
<p>3.1 RET Types.</p>
<p>3.2 Rule–Based OPC.</p>
<p>3.3 Rule–Based PSM.</p>
<p>3.4 Rule–Based OAI.</p>
<p>3.5 Summary.</p>
<p>4 Fundamentals of Optimization.</p>
<p>4.1 Definition and Classification.</p>
<p>4.2 Unconstrained Optimization.</p>
<p>4.3 Summary.</p>
<p>5 Computational Lithography with Coherent Illumination.</p>
<p>5.1 Problem Formulation.</p>
<p>5.2 OPC Optimization.</p>
<p>5.3 Two–Phase PSM Optimization.</p>
<p>5.4 Generalized PSM Optimization.</p>
<p>5.5 Resist Modeling Effects.</p>
<p>5.6 Summary.</p>
<p>6 Regularization Framework.</p>
<p>6.1 Discretization Penalty.</p>
<p>6.2 Complexity Penalty.</p>
<p>6.3 Summary.</p>
<p>7 Computational Lithography with Partially Coherent Illumination.</p>
<p>7.1 OPC Optimization.</p>
<p>7.2 PSM Optimization.</p>
<p>7.3 Summary.</p>
<p>8 Other RET Optimization Techniques.</p>
<p>8.1 Double–Patterning Method.</p>
<p>8.2 Post–Processing Based on 2D DCT.</p>
<p>8.3 Photoresist Tone Reversing Method.</p>
<p>8.4 Summary.</p>
<p>9 Source and Mask Optimization.</p>
<p>9.1 Lithography Preliminaries.</p>
<p>9.2 Topological Constraint.</p>
<p>9.3 Source Mask Optimization Algorithm.</p>
<p>9.4 Simulations.</p>
<p>9.5 Summary.</p>
<p>10 Coherent Thick–Mask Optimization.</p>
<p>10.1 Kirchhoff Boundary Conditions.</p>
<p>10.2 Boundary Layer Model.</p>
<p>10.3 Lithography Preliminaries.</p>
<p>10.4 OPC Optimization.</p>
<p>10.5 PSM Optimization.</p>
<p>10.6 Summary.</p>
<p>11 Conclusions and New Directions of Computational Lithography.</p>
<p>11.1 Conclusion.</p>
<p>11.2 New Directions of Computational Lithography.</p>
<p>Appendix A: Formula Derivation in Chapter 5.</p>
<p>Appendix B: Manhattan Geometry.</p>
<p>Appendix C: Formula Derivation in Chapter 6.</p>
<p>Appendix D: Formula Derivation in Chapter 7.</p>
<p>Appendix E: Formula Derivation in Chapter 8.</p>
<p>Appendix F: Formula Derivation in Chapter 9.</p>
<p>Appendix G: Formula Derivation in Chapter 10.</p>
<p>Appendix H: Software Guide.</p>
<p>References.</p>
<p>Index.</p>