Emerging Ferroelectric Materials and Devices

1. ScAlN Epitaxy: Transistors Through High ScN Fraction Thin Films<br>Matthew Hardy<br>2. To be determined<br>Asif Khan<br>3. To be determined<br>John Heron<br>4. Polarity and Ferroelectricity in Wurtzite-Type Materials<br>Simon Fichtner<br>5. In-plane ferroelectric switching of non-polar wurtzite AlScN films using SAW resonators<br>Oliver Ambacher and Mohamed Yassine<br>6. 2D ferroelectrics and device applications<br>Cheng Gong<br>7. Toward New Ferroelectric Nitride Materials and Devices: Aluminum Boron Nitride and Aluminum Scandium Nitride Ferroelectric High Electron Mobility Transistors (Ferro HEMTs)<br>Joseph Casamento and Huili Grace Xing<br>8. Recent advances of epitaxial ferroelectric nitrides<br>Zetian Mi