Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
Samenvatting
Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs
Covers novel indium arsenide architectures for achieving terahertz frequencies
Discusses impact of device parameters on frequency response
Illustrates noise characterization of optimized indium arsenide HEMTs
Introduces terahertz electronics including sources for terahertz applications

