III-Nitride Semiconductor Optoelectronics

<p>1. Materials Challenges of AlGaN-Based UV Optoelectronic DevicesM.H. Crawford2. Development of Deep UV LEDs and　Current Problems in Material and Device TechnologyM. Shatalov, R. Jain, T. Saxena, A. Dobrinsky and M. Shur3. Growth of High-Quality AlN on Sapphire and Development of AlGaN Based Deep-Ultraviolet Light-Emitting DiodesH. Hirayama4. III-N Wide Bandgap Deep-Ultraviolet Lasers and PhotodetectorsT. Detchprohm, X. Li, S.-C. Shen, P.D. Yoder and R.D. Dupuis5. Al(Ga)N Nanowire Deep Ultraviolet OptoelectronicsS. Zhao and Z. Mi6. Growth and Structural Characterization of Self-Nucleated III-Nitride NanowiresT. Auzelle and B. Daudin7. Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma Assisted Molecular Beam EpitaxyS. Albert, A.M. Bengoechea-Encabo, M.Á. Sánchez-García and E. Calleja8. InN Nanowires: Epitaxial Growth, Characterization, and Device ApplicationsS. Zhao and Z. Mi9. Dynamic Atomic Layer Epitaxy of InN on/in GaN and its Application for Fabricating Ordered Alloys in Whole III-N SystemK. Kusakabe and A. Yoshikawa10. Nitride Semiconductor Nanorod Heterostructures for Full-Color and White-Light ApplicationsS. Gwo, Y.-J. Lu, H.-W. Lin, C.-T. Kuo, C.-L. Wu, M.-Y. Lu and L.-J. Chen11. III-Nitride Electrically Pumped Visible and Near-Infrared Nanowire Lasers on (001) SiliconP. Bhattacharya, A. Hazari, S. Jahangir, W. Guo and T. Frost12. Exploring the Next Phase in Gallium Nitride Photonics: Cubic Phase Light Emitters Hetero-Integrated on SiliconC. Bayram and R. Liu</p>